High-temperature Raman spectroscopy

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High-pressure Raman spectroscopy of graphene

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In situ high pressure-temperature Raman spectroscopy technique with laser-heated diamond anvil cells

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High-Temperature Raman Spectroscopy of Nano-Crystalline Carbon in Silicon Oxycarbide

The microstructure of segregated carbon in silicon oxycarbide (SiOC), hot-pressed at T = 1600 °C and p = 50 MPa, has been investigated by VIS Raman spectroscopy (λ = 514 nm) within the temperature range 25-1000 °C in air. The occurrence of the G, D' and D bands at 1590, 1620 and 1350 cm-1, together with a lateral crystal size La < 10 nm and an average distance between lattice defects LD ≈ 8 nm,...

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ژورنال

عنوان ژورنال: Pure and Applied Chemistry

سال: 2019

ISSN: 1365-3075,0033-4545

DOI: 10.1515/pac-2019-0115